Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling

نویسندگان

  • V. P. Markevich
  • A. R. Peaker
  • S. B. Lastovskii
  • L. I. Murin
  • J. Coutinho
  • V. J. B. Torres
  • P. R. Briddon
  • L. Dobaczewski
  • E. V. Monakhov
  • B. G. Svensson
چکیده

V. P. Markevich,1 A. R. Peaker,1 S. B. Lastovskii,2 L. I. Murin,2 J. Coutinho,3 V. J. B. Torres,3 P. R. Briddon,4 L. Dobaczewski,5 E. V. Monakhov,6 and B. G. Svensson6 1School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD, United Kingdom 2Scientific-Practical Materials Research Centre, NAS of Belarus, P. Brovka Str. 19, Minsk 220072, Belarus 3I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal 4School of Natural Science, University of Newcastle upon Tyne, Newcastle-upon-Tyne NE1 7RU, United Kingdom 5Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland 6Department of Physics, Oslo University, N-0316 Oslo, Norway Received 25 September 2009; revised manuscript received 27 November 2009; published 30 December 2009

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تاریخ انتشار 2009